| PART |
Description |
Maker |
| A4405 |
The A4405 is an automotive power management IC that uses a high frequency constant on-time 5.45 V pre-regulator to supply two internal 5 V linear regulators and a 3.3 V linear DMOS driver.
|
Allegro MicroSystems
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| FD3000AU-120DA |
HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE 高功率，高频率新闻袋
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| 15GN01MA |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| ST49C101A ST49C101ACF8-01 ST49C101ACF8-03 ST49C101 |
High Frequency Clock Multiplier 80 MHz, OTHER CLOCK GENERATOR, PDSO8
High Frequency Clock Multiplier(高频时钟乘法器（掩摸可编程单片模拟锁相环设备
Preprogrammed High Speed Frequency Multiplier
|
Exar, Corp.
EXAR[Exar Corporation]
|
| FZ800R12KS4B2 |
High Power Module with AlSiC base plate and short tail IGBT2 for high switching frequency
|
eupec GmbH
|
| 15GN01CA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| FP1109-1R0-R FP1109-R20-R FP1109-R23-R FP1109-R27- |
1 ELEMENT, 0.95 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
High Current, High Frequency, Power Inductors
|
COOPER INDUSTRIES
Cooper Bussmann, Inc.
|
| HCP0805-1R0-R HCP0805-1R5-R HCP0805-2R2-R HCP0805- |
1 ELEMENT, 1 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
High Current, High Frequency, Power Inductors
|
COOPER INDUSTRIES
Cooper Bussmann, Inc.
|
| MC12CD060D-F MC12CF080D-F MC12FD560J-F MC12EF120J- |
High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option
|
Cornell Dubilier Electr...
|
| 4126L-T60-T 4126 4126-T60-T |
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS 200 V, NPN, Si, POWER TRANSISTOR, TO-126
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS 高频开关晶体管BALLASTERS
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| KSC2690 KSC2690A |
NPN (AUDIO FREQUENCY, HIGH FREQUENCY POWER AMPLIFIER)
|
SAMSUNG[Samsung semiconductor]
|
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